| High performance Schottky diodes based on indium-gallium-zinc-oxide | |
| Zhang, Jiawei; Xin, Qian; Song, Aimin | |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
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| 2016 | |
| 卷号 | 34期号:4 |
| DOI | 10.1116/1.4945102 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4707245 |
| 专题 | 山东大学 |
| 作者单位 | 1.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England. 2.Shandong Univ, Sch Phys, Jina |
| 推荐引用方式 GB/T 7714 | Zhang, Jiawei,Xin, Qian,Song, Aimin. High performance Schottky diodes based on indium-gallium-zinc-oxide[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2016,34(4). |
| APA | Zhang, Jiawei,Xin, Qian,&Song, Aimin.(2016).High performance Schottky diodes based on indium-gallium-zinc-oxide.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,34(4). |
| MLA | Zhang, Jiawei,et al."High performance Schottky diodes based on indium-gallium-zinc-oxide".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 34.4(2016). |
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