| Effect of annealing on the properties of Ga2O3:Mg films prepared on α-Al2O3(0001) by MOCVD | |
| Feng, Xianjin; Li, Zhao; Mi, Wei; Ma, Jin | |
| 刊名 | Vacuum
 |
| 2016 | |
| 卷号 | 124页码:101-107 |
| DOI | 10.1016/j.vacuum.2015.06.032 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4705804 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Physics, Shandong University, Jinan 2.250100, China |
| 推荐引用方式 GB/T 7714 | Feng, Xianjin,Li, Zhao,Mi, Wei,et al. Effect of annealing on the properties of Ga2O3:Mg films prepared on α-Al2O3(0001) by MOCVD[J]. Vacuum,2016,124:101-107. |
| APA | Feng, Xianjin,Li, Zhao,Mi, Wei,&Ma, Jin.(2016).Effect of annealing on the properties of Ga2O3:Mg films prepared on α-Al2O3(0001) by MOCVD.Vacuum,124,101-107. |
| MLA | Feng, Xianjin,et al."Effect of annealing on the properties of Ga2O3:Mg films prepared on α-Al2O3(0001) by MOCVD".Vacuum 124(2016):101-107. |
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