| THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping | |
| Wu, Xuefei; Wu, Zhiming; Ji, Chunhui; Zhang, Huafu; Su, Yuanjie; Huang, Zehua; Gou, Jun; Wei, Xiongbang; Wang, Jun; Jiang, Yadong | |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 2016 | |
| 卷号 | 8期号:18页码:11842-11850 |
| 关键词 | vanadium dioxide insulator-metal transition Raman shift THz transmittance Al doping |
| DOI | 10.1021/acsami.5b12417 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4703362 |
| 专题 | 山东大学 |
| 作者单位 | Univ Elect Sci & Technol China, |
| 推荐引用方式 GB/T 7714 | Wu, Xuefei,Wu, Zhiming,Ji, Chunhui,et al. THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(18):11842-11850. |
| APA | Wu, Xuefei.,Wu, Zhiming.,Ji, Chunhui.,Zhang, Huafu.,Su, Yuanjie.,...&Jiang, Yadong.(2016).THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping.ACS APPLIED MATERIALS & INTERFACES,8(18),11842-11850. |
| MLA | Wu, Xuefei,et al."THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping".ACS APPLIED MATERIALS & INTERFACES 8.18(2016):11842-11850. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论