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	Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate
	Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	109期号:1
DOI	10.1063/1.4955452
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4697887
专题	山东大学
作者单位	Tianjin Univ, Coll Precis Instruments & Opt
推荐引用方式 GB/T 7714	Che, Yongli,Zhang, Yating,Cao, Xiaolong,et al. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate[J]. APPLIED PHYSICS LETTERS,2016,109(1).
APA	Che, Yongli.,Zhang, Yating.,Cao, Xiaolong.,Song, Xiaoxian.,Cao, Mingxuan.,...&Yao, Jianquan.(2016).Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate.APPLIED PHYSICS LETTERS,109(1).
MLA	Che, Yongli,et al."Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate".APPLIED PHYSICS LETTERS 109.1(2016).

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