Effect of annealing on the properties of Ga2O3:Mg films prepared on alpha-Al2O3 (0001) by MOCVD | |
Feng, Xianjin; Li, Zhao; Mi, Wei; Ma, Jin | |
刊名 | VACUUM
![]() |
2016 | |
卷号 | 124页码:101-107 |
关键词 | Mg-doped Ga2O3 films MOCVD Annealing Crystal structure Electrical properties Optical properties |
DOI | 10.1016/j.vacuum.2015.06.032 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4697157 |
专题 | 山东大学 |
作者单位 | Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
推荐引用方式 GB/T 7714 | Feng, Xianjin,Li, Zhao,Mi, Wei,et al. Effect of annealing on the properties of Ga2O3:Mg films prepared on alpha-Al2O3 (0001) by MOCVD[J]. VACUUM,2016,124:101-107. |
APA | Feng, Xianjin,Li, Zhao,Mi, Wei,&Ma, Jin.(2016).Effect of annealing on the properties of Ga2O3:Mg films prepared on alpha-Al2O3 (0001) by MOCVD.VACUUM,124,101-107. |
MLA | Feng, Xianjin,et al."Effect of annealing on the properties of Ga2O3:Mg films prepared on alpha-Al2O3 (0001) by MOCVD".VACUUM 124(2016):101-107. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论