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	Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process
	Zhang Y.; Zhu H.; Zhang L.; Fu M.
刊名	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
	2016
卷号	831页码:99-104
关键词	CEPC vertex detector Charge collection CPS Radiation damage TCAD simulation
DOI	10.1016/j.nima.2016.03.031
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4693984
专题	山东大学
作者单位	State Key Laboratory of Particle Detection and Electronics, Beijing, 100049, China, Institute of High Energy Physics, 19B YuquanLu, Beijing
推荐引用方式 GB/T 7714	Zhang Y.,Zhu H.,Zhang L.,et al. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2016,831:99-104.
APA	Zhang Y.,Zhu H.,Zhang L.,&Fu M..(2016).Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process.Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,831,99-104.
MLA	Zhang Y.,et al."Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process".Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 831(2016):99-104.

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