Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process | |
Zhang Y.; Zhu H.; Zhang L.; Fu M. | |
刊名 | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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2016 | |
卷号 | 831页码:99-104 |
关键词 | CEPC vertex detector Charge collection CPS Radiation damage TCAD simulation |
DOI | 10.1016/j.nima.2016.03.031 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4693984 |
专题 | 山东大学 |
作者单位 | State Key Laboratory of Particle Detection and Electronics, Beijing, 100049, China, Institute of High Energy Physics, 19B YuquanLu, Beijing |
推荐引用方式 GB/T 7714 | Zhang Y.,Zhu H.,Zhang L.,et al. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2016,831:99-104. |
APA | Zhang Y.,Zhu H.,Zhang L.,&Fu M..(2016).Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process.Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,831,99-104. |
MLA | Zhang Y.,et al."Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process".Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 831(2016):99-104. |
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