| Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes | |
| Xu MS(徐明升); Zhang H(张恒); Zhou QB(周泉斌); Wang H(王洪) | |
| 刊名 | Optoelectronics Letters
 |
| 2016 | |
| 期号 | 04页码:249-252 |
| 关键词 | LED Ga Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes type |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4690235 |
| 专题 | 山东大学 |
| 作者单位 | Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics,South China Univ |
| 推荐引用方式 GB/T 7714 | Xu MS,Zhang H,Zhou QB,et al. Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes[J]. Optoelectronics Letters,2016(04):249-252. |
| APA | Xu MS,Zhang H,Zhou QB,&Wang H.(2016).Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes.Optoelectronics Letters(04),249-252. |
| MLA | Xu MS,et al."Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes".Optoelectronics Letters .04(2016):249-252. |
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