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	Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers
	Guo, Jingwei; Huang, Hui; Ding, Yizheng; Ji, Zhuoyu; Liu, Ming; Ren, Xiaomin; Zhang, Xia; Huang, Yongqing
刊名	JOURNAL OF CRYSTAL GROWTH
	2012
卷号	359页码:30-34
关键词	Nanostructures Metalorganic chemical vapor deposition Nanomaterials Semiconducting III-V materials
ISSN号	0022-0248
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4670644
专题	大连理工大学
作者单位	1.Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China. 2.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China. 3.Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China. 4.Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China.
推荐引用方式 GB/T 7714	Guo, Jingwei,Huang, Hui,Ding, Yizheng,et al. Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers[J]. JOURNAL OF CRYSTAL GROWTH,2012,359:30-34.
APA	Guo, Jingwei.,Huang, Hui.,Ding, Yizheng.,Ji, Zhuoyu.,Liu, Ming.,...&Huang, Yongqing.(2012).Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers.JOURNAL OF CRYSTAL GROWTH,359,30-34.
MLA	Guo, Jingwei,et al."Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers".JOURNAL OF CRYSTAL GROWTH 359(2012):30-34.

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