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Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering
He YangYang; Su YuanJun; Zhu Ming; Cao BaoSheng; Dong Bin
刊名SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
2012
卷号55页码:2070-2075
关键词hydrogenated microcrystalline silicon ion bombardment magnetron sputtering silicon-hydrogen bonding configuration
ISSN号1674-7348
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4670413
专题大连理工大学
作者单位1.Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China.
2.Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China.
推荐引用方式
GB/T 7714
He YangYang,Su YuanJun,Zhu Ming,et al. Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55:2070-2075.
APA He YangYang,Su YuanJun,Zhu Ming,Cao BaoSheng,&Dong Bin.(2012).Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55,2070-2075.
MLA He YangYang,et al."Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55(2012):2070-2075.
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