Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering | |
He YangYang; Su YuanJun; Zhu Ming; Cao BaoSheng; Dong Bin | |
刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY |
2012 | |
卷号 | 55页码:2070-2075 |
关键词 | hydrogenated microcrystalline silicon ion bombardment magnetron sputtering silicon-hydrogen bonding configuration |
ISSN号 | 1674-7348 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4670413 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China. 2.Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. |
推荐引用方式 GB/T 7714 | He YangYang,Su YuanJun,Zhu Ming,et al. Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55:2070-2075. |
APA | He YangYang,Su YuanJun,Zhu Ming,Cao BaoSheng,&Dong Bin.(2012).Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55,2070-2075. |
MLA | He YangYang,et al."Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55(2012):2070-2075. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论