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	Copper-nickel-molybdenum alloy thin film for integrated circuits comprises nickel as solution element, molybdenum as diffusion barrier element, and copper, where nickel and molybdenum are co-doped with copper and exhibit specific enthalpies.
	LI X ZHANG X ZHU J WANG Q DONG C
	2013
公开日期	2013-05-30
URL标识	查看原文
申请日期	2013-01-27
内容类型	专利
URI标识	http://www.corc.org.cn/handle/1471x/4637508
专题	大连理工大学
作者单位	UNIV DALIAN TECHNOLOGY UNIV DALIAN TECHNOLOGY (UYDA-C
推荐引用方式 GB/T 7714	LI X ZHANG X ZHU J WANG Q DONG C. Copper-nickel-molybdenum alloy thin film for integrated circuits comprises nickel as solution element, molybdenum as diffusion barrier element, and copper, where nickel and molybdenum are co-doped with copper and exhibit specific enthalpies.. 2013-01-01.

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