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	Passively Q-switched mode-locked Ho,Pr:LiLuF4 laser operating at 2.9 μm with semiconductor saturable absorber mirror
	Yang, Yaling[1]; Nie, Hongkun[2]; Zhang, Baitao[2]; Yang, Kejian[1,2]; Zhang, Peixiong[3,4]; Sun, Xiaoli[2]; Yan, Bingzheng[2]; Li, Guoru[2]; Wang, Yiran[2]; Liu, Junting[2]
	2018
卷号	11期号:11
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4634085
专题	暨南大学
作者单位	1.[1] School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Qingdao, 266237, China 2.[2] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Ji'nan, 250100, China 3.[3] Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China 4.[4] Department of Optoelectronic Engineering, Jinan University, Guangzhou, Guangdong, 510632, China
推荐引用方式 GB/T 7714	Yang, Yaling[1],Nie, Hongkun[2],Zhang, Baitao[2],et al. Passively Q-switched mode-locked Ho,Pr:LiLuF4 laser operating at 2.9 μm with semiconductor saturable absorber mirror[J],2018,11(11).
APA	Yang, Yaling[1].,Nie, Hongkun[2].,Zhang, Baitao[2].,Yang, Kejian[1,2].,Zhang, Peixiong[3,4].,...&He, Jingliang[2].(2018).Passively Q-switched mode-locked Ho,Pr:LiLuF4 laser operating at 2.9 μm with semiconductor saturable absorber mirror.,11(11).
MLA	Yang, Yaling[1],et al."Passively Q-switched mode-locked Ho,Pr:LiLuF4 laser operating at 2.9 μm with semiconductor saturable absorber mirror".11.11(2018).

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