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	Low frequency noise behaviors in the partially depleted silicon-on-insulator device
	Wang Kai[1,2]; Liu Yuan[2]; Chen Hai-Bo[3]; Deng Wan-Ling[1]; En Yun-Fei[2]; Zhang Ping[1,2]
	2015
卷号	64期号:10
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4622712
专题	暨南大学
作者单位	1.[1]Jinan Univ, Sch Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China 2.[2]CEPREI, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 3.[3]China Elect Technol Grp Corp, Res Inst 58, Wuxi 214035, Peoples R China
推荐引用方式 GB/T 7714	Wang Kai[1,2],Liu Yuan[2],Chen Hai-Bo[3],et al. Low frequency noise behaviors in the partially depleted silicon-on-insulator device[J],2015,64(10).
APA	Wang Kai[1,2],Liu Yuan[2],Chen Hai-Bo[3],Deng Wan-Ling[1],En Yun-Fei[2],&Zhang Ping[1,2].(2015).Low frequency noise behaviors in the partially depleted silicon-on-insulator device.,64(10).
MLA	Wang Kai[1,2],et al."Low frequency noise behaviors in the partially depleted silicon-on-insulator device".64.10(2015).

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