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	Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon
	Dai, Houfu; Li, Shaobo; Chen, Genyu
刊名	Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology
	2019
卷号	Vol.233 No.1页码:61-73
ISSN号	1350-6501;2041-305X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4615151
专题	湖南大学
作者单位	1.College of Mechanical Engineering, Guizhou University, Guiyang, China 2.State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Dai, Houfu,Li, Shaobo,Chen, Genyu. Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon[J]. Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology,2019,Vol.233 No.1:61-73.
APA	Dai, Houfu,Li, Shaobo,&Chen, Genyu.(2019).Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon.Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology,Vol.233 No.1,61-73.
MLA	Dai, Houfu,et al."Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon".Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology Vol.233 No.1(2019):61-73.

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