The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals

	The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals
	Ang, R ; Chen, TP ; Yang, M ; Wong, JI ; Yi, MD
刊名	journal of physics d-applied physics
	2010-01-13
卷号	43 期号:1
学科主题	中科院强磁场科学中心
公开日期	2012-07-18
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/7301]
专题	合肥物质科学研究院_中科院强磁场科学中心
推荐引用方式 GB/T 7714	Ang, R,Chen, TP,Yang, M,et al. The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals[J]. journal of physics d-applied physics,2010,43(1).
APA	Ang, R,Chen, TP,Yang, M,Wong, JI,&Yi, MD.(2010).The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals.journal of physics d-applied physics,43(1).
MLA	Ang, R,et al."The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals".journal of physics d-applied physics 43.1(2010).