CORC  > 湖南大学
van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe as high performance contacts for WSe transistors
Bei Zhao; Weiqi Dang; Xiangdong Yang; Jia Li; Haihong Bao; Kai Wang; Jun Luo; Zhengwei Zhang; Bo Li; Haipeng Xie
刊名Nano Research
2019
卷号Vol.12 No.7页码:1683-1689
关键词in situ growth nonlayered NiSe nanosheets Schottky barrier metal-semiconductor junctions chemical vapor deposition
ISSN号1998-0124;1998-0000
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4610268
专题湖南大学
作者单位1.Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering,Hunan University,Changsha,China
2.School of Physics and Electronics,Hunan University,Changsha,China
3.Center for Electron Microscopy Institute for New Energy Materials and Low-Carbon Technologies School of Materials,Tianjin University of Technology,Tianjin,China
4.Hunan Key Laboratory of Super-microstructure and Ultrafast Process, College of Physics and Electronics,Central South University,Changsha,China
推荐引用方式
GB/T 7714
Bei Zhao,Weiqi Dang,Xiangdong Yang,et al. van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe as high performance contacts for WSe transistors[J]. Nano Research,2019,Vol.12 No.7:1683-1689.
APA Bei Zhao.,Weiqi Dang.,Xiangdong Yang.,Jia Li.,Haihong Bao.,...&Xidong Duan.(2019).van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe as high performance contacts for WSe transistors.Nano Research,Vol.12 No.7,1683-1689.
MLA Bei Zhao,et al."van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe as high performance contacts for WSe transistors".Nano Research Vol.12 No.7(2019):1683-1689.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace