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	Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime
	Ying Xia; Guoli Li; Bei Jiang; Zhenyu Yang; Xingqiang Liu; Xiangheng Xiao; Denis Flandre; Chunlan Wang; Yuan Liu; Lei Liao
刊名	Nanoscale
	2019
卷号	Vol.11 No.21页码:10420-10428
ISSN号	2040-3364;2040-3372
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4608835
专题	湖南大学
作者单位	1.Corresponding authors 2.a School of Physics and Technology, Wuhan University, Wuhan 430072, China E-mail: liaolei@whu.edu.cn 3.State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China E-mail: liguoli_lily@hnu.edu.cn 4.Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Louvain-la-Neuve B-1348, Belgium 5.School of Science Xi'an Polytechnic University, Xi'an 710048, China
推荐引用方式 GB/T 7714	Ying Xia,Guoli Li,Bei Jiang,et al. Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime[J]. Nanoscale,2019,Vol.11 No.21:10420-10428.
APA	Ying Xia.,Guoli Li.,Bei Jiang.,Zhenyu Yang.,Xingqiang Liu.,...&Lei Liao.(2019).Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime.Nanoscale,Vol.11 No.21,10420-10428.
MLA	Ying Xia,et al."Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime".Nanoscale Vol.11 No.21(2019):10420-10428.

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