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	High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination
	Yangyang Gao; Ang Li; Qian Feng; Zhuangzhuang Hu; Zhaoqing Feng; Ke Zhang; Xiaoli Lu; Chunfu Zhang; Hong Zhou; Wenxiang Mu
刊名	Nanoscale Research Letters
	2019
卷号	Vol.14 No.1
关键词	β-Ga2O3 Schottky diode Argon implantation Edge termination
ISSN号	1931-7573;1556-276X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4607322
专题	湖南大学
作者单位	1.State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics,Xidian University,Xi’an,China 2.State Key Laboratory of Crystal Materials, Key laboratory of Functional Crystal Materials and Device,Shandong University,Jinan,China
推荐引用方式 GB/T 7714	Yangyang Gao,Ang Li,Qian Feng,et al. High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination[J]. Nanoscale Research Letters,2019,Vol.14 No.1.
APA	Yangyang Gao.,Ang Li.,Qian Feng.,Zhuangzhuang Hu.,Zhaoqing Feng.,...&Yue Hao.(2019).High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination.Nanoscale Research Letters,Vol.14 No.1.
MLA	Yangyang Gao,et al."High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination".Nanoscale Research Letters Vol.14 No.1(2019).

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