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	Magnetoelectric behavior of ferrimagnetic BixCo 2-xMnO4 (x=0, 0.1 and 0.3) thin films
	Rajeevan, N.E.[1]; Kumar, Ravi[2]; Shukla, D.K.[3]; Choudhary, R.J.[4]; Thakur, P.[5]; Singh, A.K.[6]; Patnaik, S.[6]; Arora, S.K.[7]; Shvets, I.V.[7]; Pradyumnan, P.P.[8]
	2011
卷号	323期号:13页码:1760
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4607221
专题	暨南大学
作者单位	1.[1] Department of Physics, Z.G. College, University of Calicut, Kerala 673 014, India 2.[2] Centre for Materials Science and Engineering, NIT, Hamirpur [HP] 177005, India 3.[3] Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, Hamburg 22603, Germany 4.[4] UGC DAE Consortium for Scientific Research, Indore 452 057, India 5.[5] European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France 6.[6] School of Physical Sciences, JNU, New Delhi 110 067, India 7.[7] CRANN, School of Physics, Trinity College, Dublin 2, Ireland 8.[8] Department of Physics, University of Calicut, Kerala 673 635, India
推荐引用方式 GB/T 7714	Rajeevan, N.E.[1],Kumar, Ravi[2],Shukla, D.K.[3],et al. Magnetoelectric behavior of ferrimagnetic BixCo 2-xMnO4 (x=0, 0.1 and 0.3) thin films[J],2011,323(13):1760.
APA	Rajeevan, N.E.[1].,Kumar, Ravi[2].,Shukla, D.K.[3].,Choudhary, R.J.[4].,Thakur, P.[5].,...&Pradyumnan, P.P.[8].(2011).Magnetoelectric behavior of ferrimagnetic BixCo 2-xMnO4 (x=0, 0.1 and 0.3) thin films.,323(13),1760.
MLA	Rajeevan, N.E.[1],et al."Magnetoelectric behavior of ferrimagnetic BixCo 2-xMnO4 (x=0, 0.1 and 0.3) thin films".323.13(2011):1760.

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