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	Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film
	Zhuangzhuang Hu; Qian Feng; Zhaoqing Feng; Yuncong Cai; Yixian Shen; Guangshuo Yan; Xiaoli Lu; Chunfu Zhang; Hong Zhou; Jincheng Zhang
刊名	Nanoscale Research Letters
	2019
卷号	Vol.14 No.1
关键词	β-Ga2O3 Schottky diode Carrier transport mechanism Reverse bias Schottky emission Breakdown voltage
ISSN号	1931-7573;1556-276X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4606811
专题	湖南大学
作者单位	State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics,Xidian University,Xi’an,China
推荐引用方式 GB/T 7714	Zhuangzhuang Hu,Qian Feng,Zhaoqing Feng,et al. Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film[J]. Nanoscale Research Letters,2019,Vol.14 No.1.
APA	Zhuangzhuang Hu.,Qian Feng.,Zhaoqing Feng.,Yuncong Cai.,Yixian Shen.,...&Yue Hao.(2019).Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.Nanoscale Research Letters,Vol.14 No.1.
MLA	Zhuangzhuang Hu,et al."Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film".Nanoscale Research Letters Vol.14 No.1(2019).

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