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	Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory
	Qi Li; Yu Zhang; Xingqi Zou; Jing Gao; Chuan Yang; Lei Ding; Zhipeng Wu; Na Li; Sen Zhang and Zongliang Huo
刊名	Semiconductor Science and Technology
	2019
卷号	Vol.34 No.2页码:02LT01
ISSN号	0268-1242;1361-6641
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4604727
专题	湖南大学
作者单位	1.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 2.Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People’s Republic of China 3.Yangtze Memory Technologies Co., Ltd, Wuhan 430205, People’s Republic of China
推荐引用方式 GB/T 7714	Qi Li,Yu Zhang,Xingqi Zou,et al. Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory[J]. Semiconductor Science and Technology,2019,Vol.34 No.2:02LT01.
APA	Qi Li.,Yu Zhang.,Xingqi Zou.,Jing Gao.,Chuan Yang.,...&Sen Zhang and Zongliang Huo.(2019).Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory.Semiconductor Science and Technology,Vol.34 No.2,02LT01.
MLA	Qi Li,et al."Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory".Semiconductor Science and Technology Vol.34 No.2(2019):02LT01.

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