-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition | |
Yang, Zai-xing; Liu, Lizhe; Yip, SenPo; Li, Dapan; Shen, Lifan; Zhou, Ziyao; Han, Ning; Hung, Tak Fu; Pun, Edwin Yue-Bun; Wu, Xinglo 更多 | |
刊名 | ACS NANO
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2017 | |
卷号 | 11期号:4页码:4237-4246 |
关键词 | GaSb nanowires growth orientation high mobility vapor-solid-solid interface plane orientation in-plane lattice mismatch |
DOI | 10.1021/acsnano.7b01217 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4596557 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China. 2.Shandong Univ, Sch Microel |
推荐引用方式 GB/T 7714 | Yang, Zai-xing,Liu, Lizhe,Yip, SenPo,et al. -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition[J]. ACS NANO,2017,11(4):4237-4246. |
APA | Yang, Zai-xing.,Liu, Lizhe.,Yip, SenPo.,Li, Dapan.,Shen, Lifan.,...&Wu, Xinglo 更多.(2017).-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.ACS NANO,11(4),4237-4246. |
MLA | Yang, Zai-xing,et al."-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition".ACS NANO 11.4(2017):4237-4246. |
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