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	Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors
	Fu, Chen; Lin, Zhaojun; Liu, Yan; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao
刊名	Superlattices and Microstructures
	2017
卷号	111页码:806-815
DOI	10.1016/j.spmi.2017.07.040
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4596127
专题	山东大学
作者单位	1.School of Microelectronics, Shandong University, Jinan 2.250100, China 3.Microsys
推荐引用方式 GB/T 7714	Fu, Chen,Lin, Zhaojun,Liu, Yan,et al. Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Superlattices and Microstructures,2017,111:806-815.
APA	Fu, Chen.,Lin, Zhaojun.,Liu, Yan.,Cui, Peng.,Lv, Yuanjie.,...&Luan, Chongbiao.(2017).Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and Microstructures,111,806-815.
MLA	Fu, Chen,et al."Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors".Superlattices and Microstructures 111(2017):806-815.

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