High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors | |
Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin | |
刊名 | MATERIALS
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2017 | |
卷号 | 10期号:3 |
关键词 | thin-film transistor ring oscillators IGZO SnO |
DOI | 10.3390/ma10030319 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4594014 |
专题 | 山东大学 |
作者单位 | 1.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England. 2.[Yang, Jia |
推荐引用方式 GB/T 7714 | Zhang, Jiawei,Yang, Jia,Li, Yunpeng,et al. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors[J]. MATERIALS,2017,10(3). |
APA | Zhang, Jiawei.,Yang, Jia.,Li, Yunpeng.,Wilson, Joshua.,Ma, Xiaochen.,...&Song, Aimin.(2017).High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.MATERIALS,10(3). |
MLA | Zhang, Jiawei,et al."High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors".MATERIALS 10.3(2017). |
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