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	High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors
	Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin
刊名	MATERIALS
	2017
卷号	10期号:3
关键词	thin-film transistor ring oscillators IGZO SnO
DOI	10.3390/ma10030319
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4594014
专题	山东大学
作者单位	1.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England. 2.[Yang, Jia
推荐引用方式 GB/T 7714	Zhang, Jiawei,Yang, Jia,Li, Yunpeng,et al. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors[J]. MATERIALS,2017,10(3).
APA	Zhang, Jiawei.,Yang, Jia.,Li, Yunpeng.,Wilson, Joshua.,Ma, Xiaochen.,...&Song, Aimin.(2017).High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.MATERIALS,10(3).
MLA	Zhang, Jiawei,et al."High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors".MATERIALS 10.3(2017).

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