Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors | |
Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao | |
刊名 | SUPERLATTICES AND MICROSTRUCTURES |
2017 | |
卷号 | 103页码:113-120 |
关键词 | AIGaN/GaN HFETs Diffused Ohmic contact metal atoms Polarization Coulomb field scattering |
DOI | 10.1016/j.spmi.2017.01.031 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4589000 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Math, Jinan 250100, Peoples R China. 2.Shandong Univ, Sch |
推荐引用方式 GB/T 7714 | Liu, Huan,Cheng, Aijie,Lin, Zhaojun,et al. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2017,103:113-120. |
APA | Liu, Huan.,Cheng, Aijie.,Lin, Zhaojun.,Cui, Peng.,Liu, Yan.,...&Luan, Chongbiao.(2017).Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,103,113-120. |
MLA | Liu, Huan,et al."Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 103(2017):113-120. |
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