Effect of Ge Nanocrystals on 1.54 mu m Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films | |
Fan, Ranran; Lu, Fei; Li, Kaikai | |
刊名 | NANOMATERIALS |
2017 | |
卷号 | 7期号:10 |
关键词 | photoluminescence nanomaterials rare-earth-doped materials optical properties of thin films deposition and fabrication |
DOI | 10.3390/nano7100311 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4585851 |
专题 | 山东大学 |
作者单位 | Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China. |
推荐引用方式 GB/T 7714 | Fan, Ranran,Lu, Fei,Li, Kaikai. Effect of Ge Nanocrystals on 1.54 mu m Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films[J]. NANOMATERIALS,2017,7(10). |
APA | Fan, Ranran,Lu, Fei,&Li, Kaikai.(2017).Effect of Ge Nanocrystals on 1.54 mu m Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films.NANOMATERIALS,7(10). |
MLA | Fan, Ranran,et al."Effect of Ge Nanocrystals on 1.54 mu m Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films".NANOMATERIALS 7.10(2017). |
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