QQ客服 官方微博 反馈留言

	Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties
	Li, Jianfei; Lv, Yuanjie; Huang, Shulai; Ji, Ziwu; Pang, Zhiyong; Xu, Xiangang
刊名	OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
	2017
卷号	11期号:3-4页码:184-188
关键词	Strain relaxation Hall effect Photoluminescence Crack
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4585715
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China. 2.Hebei Semicond Res
推荐引用方式 GB/T 7714	Li, Jianfei,Lv, Yuanjie,Huang, Shulai,et al. Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2017,11(3-4):184-188.
APA	Li, Jianfei,Lv, Yuanjie,Huang, Shulai,Ji, Ziwu,Pang, Zhiyong,&Xu, Xiangang.(2017).Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,11(3-4),184-188.
MLA	Li, Jianfei,et al."Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 11.3-4(2017):184-188.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。