QQ客服 官方微博 反馈留言

	Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio
	Liu, Yaxuan; Du, Lulu; Liang, Guangda; Mu, Wenxiang; Jia, Zhitai; Xu, Mingsheng; Xin, Qian; Tao, Xutang; Song, Aimin
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39期号:11页码:1696-1699
关键词	Gallium oxide (Ga2O3) filed-effect-transistor (FET) solar-blind photodetector
DOI	10.1109/LED.2018.2872017
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4583867
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Liu, Yaxu
推荐引用方式 GB/T 7714	Liu, Yaxuan,Du, Lulu,Liang, Guangda,et al. Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio[J]. IEEE ELECTRON DEVICE LETTERS,2018,39(11):1696-1699.
APA	Liu, Yaxuan.,Du, Lulu.,Liang, Guangda.,Mu, Wenxiang.,Jia, Zhitai.,...&Song, Aimin.(2018).Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio.IEEE ELECTRON DEVICE LETTERS,39(11),1696-1699.
MLA	Liu, Yaxuan,et al."Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio".IEEE ELECTRON DEVICE LETTERS 39.11(2018):1696-1699.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。