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	Electronic structure engineering in silicene via atom substitution and a new two-dimensional Dirac structure Si3C
	Yin, Na; Dai, Ying; Wei, Wei; Huang, Baibiao
刊名	Physica E: Low-Dimensional Systems and Nanostructures
	2018
卷号	98页码:39-44
DOI	10.1016/j.physe.2017.12.024
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4582490
专题	山东大学
作者单位	1.School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 2.250100, Chin
推荐引用方式 GB/T 7714	Yin, Na,Dai, Ying,Wei, Wei,et al. Electronic structure engineering in silicene via atom substitution and a new two-dimensional Dirac structure Si3C[J]. Physica E: Low-Dimensional Systems and Nanostructures,2018,98:39-44.
APA	Yin, Na,Dai, Ying,Wei, Wei,&Huang, Baibiao.(2018).Electronic structure engineering in silicene via atom substitution and a new two-dimensional Dirac structure Si3C.Physica E: Low-Dimensional Systems and Nanostructures,98,39-44.
MLA	Yin, Na,et al."Electronic structure engineering in silicene via atom substitution and a new two-dimensional Dirac structure Si3C".Physica E: Low-Dimensional Systems and Nanostructures 98(2018):39-44.

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