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	Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment
	Xu, Meng; Liu, Xiaohui; Xu, Weidong; Xu, Huayong; Hao, Xiaotao; Feng, Xianjin
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2018
卷号	769页码:484-489
关键词	N-type Cu2O Pulsed laser deposition Nitrogen plasma treatment Electrical properties
DOI	10.1016/j.jallcom.2018.08.048
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4582327
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Xu, Meng
推荐引用方式 GB/T 7714	Xu, Meng,Liu, Xiaohui,Xu, Weidong,et al. Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,769:484-489.
APA	Xu, Meng,Liu, Xiaohui,Xu, Weidong,Xu, Huayong,Hao, Xiaotao,&Feng, Xianjin.(2018).Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment.JOURNAL OF ALLOYS AND COMPOUNDS,769,484-489.
MLA	Xu, Meng,et al."Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment".JOURNAL OF ALLOYS AND COMPOUNDS 769(2018):484-489.

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