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	Orientation controlled GaSb nanowires: From growth to application
	Yang, Zaixing; Ho, Johnny C.
刊名	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
	2018
DOI	10.1109/ICSICT.2018.8565764
会议名称	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
URL标识	查看原文
会议日期	31 October 2018 through 3 November 2018
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4581520
专题	山东大学
作者单位	1.Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan, China 2.Department of Physics an
推荐引用方式 GB/T 7714	Yang, Zaixing,Ho, Johnny C.. Orientation controlled GaSb nanowires: From growth to application[J]. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings,2018.
APA	Yang, Zaixing,&Ho, Johnny C..(2018).Orientation controlled GaSb nanowires: From growth to application.2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings.
MLA	Yang, Zaixing,et al."Orientation controlled GaSb nanowires: From growth to application".2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings (2018).

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