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	Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence
	Fan, Ranran; Lu, Fei; Li, Kaikai; Liu, Kaijing
刊名	Applied Surface Science
	2018
卷号	442页码:525-528
DOI	10.1016/j.apsusc.2018.02.192
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4577730
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Jinan 2.250100, China
推荐引用方式 GB/T 7714	Fan, Ranran,Lu, Fei,Li, Kaikai,et al. Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence[J]. Applied Surface Science,2018,442:525-528.
APA	Fan, Ranran,Lu, Fei,Li, Kaikai,&Liu, Kaijing.(2018).Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence.Applied Surface Science,442,525-528.
MLA	Fan, Ranran,et al."Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence".Applied Surface Science 442(2018):525-528.

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