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	A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel
	Yang, Zhiyuan; Zhao, Lili; Zhang, Jing; Sun, Li; Yu, Fapeng; Chen, Xiufang; Cheng, Xiufeng; Xu, Xiangang; Wang, Zhengping; Zhao, Xian
刊名	2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
	2018
卷号	2018-January页码:131-135
关键词	6H-SiC CVD External carbon Graphene Inner carbon Nickel catalysis Raman
DOI	10.1109/IFWS.2017.8245992
会议名称	14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
URL标识	查看原文
会议日期	1 November 2017 through 3 November 2017
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4574760
专题	山东大学
作者单位	Institute of
推荐引用方式 GB/T 7714	Yang, Zhiyuan,Zhao, Lili,Zhang, Jing,et al. A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel[J]. 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017,2018,2018-January:131-135.
APA	Yang, Zhiyuan.,Zhao, Lili.,Zhang, Jing.,Sun, Li.,Yu, Fapeng.,...&Zhao, Xian.(2018).A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel.2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017,2018-January,131-135.
MLA	Yang, Zhiyuan,et al."A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel".2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017 2018-January(2018):131-135.

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