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	A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches
	Luan, Chongbiao; Li, Boting; Zhao, Juan; Xiao, Jinshui; Ma, Xun; Li, Hongtao; Huang, Yupeng; Xiao, Longfei; Xu, Xiangang
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
卷号	65期号:1页码:172-175
关键词	4H-SiC oscillational phenomenon
DOI	10.1109/TED.2017.2777600
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4570067
专题	山东大学
作者单位	China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R Ch
推荐引用方式 GB/T 7714	Luan, Chongbiao,Li, Boting,Zhao, Juan,et al. A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(1):172-175.
APA	Luan, Chongbiao.,Li, Boting.,Zhao, Juan.,Xiao, Jinshui.,Ma, Xun.,...&Xu, Xiangang.(2018).A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(1),172-175.
MLA	Luan, Chongbiao,et al."A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.1(2018):172-175.

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