Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric | |
Ma, Pengfei; Sun, Jiamin; Liang, Guangda; Li, Yunpeng; Xin, Qian; Li, Yuxiang; Song, Aimin | |
刊名 | APPLIED PHYSICS LETTERS
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2018 | |
卷号 | 113期号:6 |
DOI | 10.1063/1.5037410 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4568074 |
专题 | 山东大学 |
作者单位 | Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peo |
推荐引用方式 GB/T 7714 | Ma, Pengfei,Sun, Jiamin,Liang, Guangda,et al. Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric[J]. APPLIED PHYSICS LETTERS,2018,113(6). |
APA | Ma, Pengfei.,Sun, Jiamin.,Liang, Guangda.,Li, Yunpeng.,Xin, Qian.,...&Song, Aimin.(2018).Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric.APPLIED PHYSICS LETTERS,113(6). |
MLA | Ma, Pengfei,et al."Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric".APPLIED PHYSICS LETTERS 113.6(2018). |
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