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	Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence
	Fan R.; Lu F.; Li K.; Liu K.
刊名	Applied Surface Science
	2018
卷号	442页码:525-528
关键词	Energy transfer Ge nanocrystal Photoluminescence Rare-earth-doped ZnO
DOI	10.1016/j.apsusc.2018.02.192
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566897
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Jinan, 250100, China 2.School of Information Science and Engineeri
推荐引用方式 GB/T 7714	Fan R.,Lu F.,Li K.,et al. Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence[J]. Applied Surface Science,2018,442:525-528.
APA	Fan R.,Lu F.,Li K.,&Liu K..(2018).Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence.Applied Surface Science,442,525-528.
MLA	Fan R.,et al."Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence".Applied Surface Science 442(2018):525-528.

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