QQ客服 官方微博 反馈留言

	Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory
	Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran
刊名	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
	2018
卷号	6期号:1页码:121-125
关键词	Charge trapping memory charge injection
DOI	10.1109/JEDS.2017.2785304
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566696
专题	山东大学
作者单位	Shandong Univ, Sch Microelect, Cent Nanoelect, Jinan 250100, Shandong, Peoples R China.
推荐引用方式 GB/T 7714	Ji, Hao,Wei, Yehui,Zhang, Xinlei,et al. Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2018,6(1):121-125.
APA	Ji, Hao,Wei, Yehui,Zhang, Xinlei,&Jiang, Ran.(2018).Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,6(1),121-125.
MLA	Ji, Hao,et al."Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6.1(2018):121-125.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。