| The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1-xO Films Deposited by Ion Beam Assisted Sputtering | |
| Sun, Hui; Chen, Sheng-Chi; Peng, Wen-Chi; Wen, Chao-Kuang; Wang, Xin; Chuang, Tung-Han | |
| 刊名 | COATINGS
 |
| 2018 | |
| 卷号 | 8期号:5 |
| 关键词 | NiO thin films optoelectronic properties oxygen flow ratio ion source assisted sputtering p-type conduction |
| DOI | 10.3390/coatings8050168 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4564817 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ Weihai, Sch Space Sci & Phys, 180 Wenhuaxi Rd, Weihai 264209, Peoples R China. 2.Ming Chi U |
| 推荐引用方式 GB/T 7714 | Sun, Hui,Chen, Sheng-Chi,Peng, Wen-Chi,et al. The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1-xO Films Deposited by Ion Beam Assisted Sputtering[J]. COATINGS,2018,8(5). |
| APA | Sun, Hui,Chen, Sheng-Chi,Peng, Wen-Chi,Wen, Chao-Kuang,Wang, Xin,&Chuang, Tung-Han.(2018).The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1-xO Films Deposited by Ion Beam Assisted Sputtering.COATINGS,8(5). |
| MLA | Sun, Hui,et al."The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1-xO Films Deposited by Ion Beam Assisted Sputtering".COATINGS 8.5(2018). |
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