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	Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors
	Sun, Jiamin; Peng, Meng; Zhang, Yushuang; Zhang, Lei; Peng, Rui; Miao, Chengcheng; Liu, Dong; Han, Mingming; Feng, Runfa; Ma, Yandon 更多
刊名	NANO LETTERS
	2019
卷号	19期号:9页码:5920-5929
关键词	GaSb NWs Sn doping photoluminescence ultrahigh hole mobility infrared photodetection
DOI	10.1021/acs.nanolett.9b01503
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4559946
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.[
推荐引用方式 GB/T 7714	Sun, Jiamin,Peng, Meng,Zhang, Yushuang,et al. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors[J]. NANO LETTERS,2019,19(9):5920-5929.
APA	Sun, Jiamin.,Peng, Meng.,Zhang, Yushuang.,Zhang, Lei.,Peng, Rui.,...&Ma, Yandon 更多.(2019).Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors.NANO LETTERS,19(9),5920-5929.
MLA	Sun, Jiamin,et al."Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors".NANO LETTERS 19.9(2019):5920-5929.

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