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	Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic-layer deposition
	Ma, Pengfei; Guo, Wenhao; Sun, Jiamin; Gao, Jiacheng; Zhang, Guanqun; Xin, Qian; Li, Yuxiang; Song, Aimin
刊名	Semiconductor Science and Technology
	2019
卷号	34期号:10
DOI	10.1088/1361-6641/ab315d
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4559430
专题	山东大学
作者单位	Center of Nanoelectronics, School of Micr
推荐引用方式 GB/T 7714	Ma, Pengfei,Guo, Wenhao,Sun, Jiamin,et al. Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic-layer deposition[J]. Semiconductor Science and Technology,2019,34(10).
APA	Ma, Pengfei.,Guo, Wenhao.,Sun, Jiamin.,Gao, Jiacheng.,Zhang, Guanqun.,...&Song, Aimin.(2019).Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic-layer deposition.Semiconductor Science and Technology,34(10).
MLA	Ma, Pengfei,et al."Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic-layer deposition".Semiconductor Science and Technology 34.10(2019).

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