| Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °c Using an Aminodisilane Precursor | |
| Kim, Dae Hyun; Lee, Han Jin; Jeong, Heonjong; Shong, Bonggeun; Kim, Woo-Hee; Park, Tae Joo | |
| 刊名 | Chemistry of Materials
 |
| 2019 | |
| 卷号 | 31期号:15页码:5502-5508 |
| DOI | 10.1021/acs.chemmater.9b01107 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4552583 |
| 专题 | 山东大学 |
| 作者单位 | 1.Department of Advanced Materials Engineering, Hanyang University, Ansan 2.15588, Korea, Republic of 3.[Jeon |
| 推荐引用方式 GB/T 7714 | Kim, Dae Hyun,Lee, Han Jin,Jeong, Heonjong,et al. Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °c Using an Aminodisilane Precursor[J]. Chemistry of Materials,2019,31(15):5502-5508. |
| APA | Kim, Dae Hyun,Lee, Han Jin,Jeong, Heonjong,Shong, Bonggeun,Kim, Woo-Hee,&Park, Tae Joo.(2019).Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °c Using an Aminodisilane Precursor.Chemistry of Materials,31(15),5502-5508. |
| MLA | Kim, Dae Hyun,et al."Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °c Using an Aminodisilane Precursor".Chemistry of Materials 31.15(2019):5502-5508. |
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