Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer | |
Ma, Xiaolei; Fan, Zhiqiang; Wu, Jixuan; Jiang, Xiangwei; Chen, Jiezhi | |
刊名 | Technical Digest - International Electron Devices Meeting, IEDM |
2019 | |
卷号 | 2018-December页码:24.2.1-24.2.4 |
DOI | 10.1109/IEDM.2018.8614557 |
会议名称 | 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 |
URL标识 | 查看原文 |
会议日期 | 1 December 2018 through 5 December 2018 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4545464 |
专题 | 山东大学 |
作者单位 | 1.School of Information Science and Engineering, Shandong University, Qingdao, China 2.Institute of Semiconductors, Chinese Academy of S |
推荐引用方式 GB/T 7714 | Ma, Xiaolei,Fan, Zhiqiang,Wu, Jixuan,et al. Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer[J]. Technical Digest - International Electron Devices Meeting, IEDM,2019,2018-December:24.2.1-24.2.4. |
APA | Ma, Xiaolei,Fan, Zhiqiang,Wu, Jixuan,Jiang, Xiangwei,&Chen, Jiezhi.(2019).Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer.Technical Digest - International Electron Devices Meeting, IEDM,2018-December,24.2.1-24.2.4. |
MLA | Ma, Xiaolei,et al."Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer".Technical Digest - International Electron Devices Meeting, IEDM 2018-December(2019):24.2.1-24.2.4. |
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