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	Scaling behaviour of state-to-state coupling during hole trapping at Si/SiO2
	Ma, Xiaolei; Jiang, Xiangwei; Chen, Jiezhi; Wang, Liwei; En, Yunfei
刊名	2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
	2019
卷号	2019-March
关键词	Charge trapping Vacancy defect level Coupling constant Scaling behavior
DOI	10.1109/IRPS.2019.8720537
会议名称	IEEE International Reliability Physics Symposium (IRPS)
URL标识	查看原文
会议日期	MAR 31-APR 04, 2019
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4545395
专题	山东大学
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 2.[Chen,
推荐引用方式 GB/T 7714	Ma, Xiaolei,Jiang, Xiangwei,Chen, Jiezhi,et al. Scaling behaviour of state-to-state coupling during hole trapping at Si/SiO2[J]. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),2019,2019-March.
APA	Ma, Xiaolei,Jiang, Xiangwei,Chen, Jiezhi,Wang, Liwei,&En, Yunfei.(2019).Scaling behaviour of state-to-state coupling during hole trapping at Si/SiO2.2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),2019-March.
MLA	Ma, Xiaolei,et al."Scaling behaviour of state-to-state coupling during hole trapping at Si/SiO2".2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) 2019-March(2019).

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