An Experimental Verified Model for Cu Electrodeposition Simulation for the Filling of High Aspect Ratio Through Silicon Vias | |
Wu, Heng; Tang, Zhen-an; Wang, Zhu; Cheng, Wan; Song, Chongsheng; Yu, Daquan; Wan, Lixi | |
2013 | |
会议名称 | IEEE 63rd Electronic Components and Technology Conference (ECTC) |
会议日期 | 2013-05-28 |
会议地点 | Las Vegas, NV |
页码 | 2366-2370 |
会议录 | IEEE 63rd Electronic Components and Technology Conference (ECTC) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4543550 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Dalian 116024, Liaoning, Peoples R China. 2.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China. 3.Dalian Univ Technol, Dalian 116024, Liaoning, Peoples R China. 4.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 5.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China. 6.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China. 7.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China. 8.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China. 9.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 10.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China. |
推荐引用方式 GB/T 7714 | Wu, Heng,Tang, Zhen-an,Wang, Zhu,et al. An Experimental Verified Model for Cu Electrodeposition Simulation for the Filling of High Aspect Ratio Through Silicon Vias[C]. 见:IEEE 63rd Electronic Components and Technology Conference (ECTC). Las Vegas, NV. 2013-05-28. |
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