CORC  > 大连理工大学
An Experimental Verified Model for Cu Electrodeposition Simulation for the Filling of High Aspect Ratio Through Silicon Vias
Wu, Heng; Tang, Zhen-an; Wang, Zhu; Cheng, Wan; Song, Chongsheng; Yu, Daquan; Wan, Lixi
2013
会议名称IEEE 63rd Electronic Components and Technology Conference (ECTC)
会议日期2013-05-28
会议地点Las Vegas, NV
页码2366-2370
会议录IEEE 63rd Electronic Components and Technology Conference (ECTC)
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/4543550
专题大连理工大学
作者单位1.Dalian Univ Technol, Dalian 116024, Liaoning, Peoples R China.
2.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China.
3.Dalian Univ Technol, Dalian 116024, Liaoning, Peoples R China.
4.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.
5.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China.
6.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China.
7.Jiangsu R&D Ctr Internet Things, Wuxi 214315, Jiangsu, Peoples R China.
8.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China.
9.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.
10.Natl Ctr Adv Packaging, Wuxi 214315, Jiangsu, Peoples R China.
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GB/T 7714
Wu, Heng,Tang, Zhen-an,Wang, Zhu,et al. An Experimental Verified Model for Cu Electrodeposition Simulation for the Filling of High Aspect Ratio Through Silicon Vias[C]. 见:IEEE 63rd Electronic Components and Technology Conference (ECTC). Las Vegas, NV. 2013-05-28.
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