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	Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field
	Long, Chen; Dai, Ying; Gong, Zhi-Rui; Jin, Hao
刊名	PHYSICAL REVIEW B
	2019
卷号	99期号:11
DOI	10.1103/PhysRevB.99.115316
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4543260
专题	山东大学
作者单位	1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China. 2.Shen
推荐引用方式 GB/T 7714	Long, Chen,Dai, Ying,Gong, Zhi-Rui,et al. Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field[J]. PHYSICAL REVIEW B,2019,99(11).
APA	Long, Chen,Dai, Ying,Gong, Zhi-Rui,&Jin, Hao.(2019).Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field.PHYSICAL REVIEW B,99(11).
MLA	Long, Chen,et al."Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field".PHYSICAL REVIEW B 99.11(2019).

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