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	Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer
	Guo, Haijun; Cao, Chao; Duan, Baoxing
刊名	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
	2019
关键词	AlGaN/GaN HEMTs Analytical model Electric field modulation
DOI	10.1109/EDSSC.2019.8754016
会议名称	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
URL标识	查看原文
会议日期	12 June 2019 through 14 June 2019
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4541349
专题	山东大学
作者单位	1.School of Information Science and Engineering, University of Jinan, Jinan, China 2.School of Microelectronics
推荐引用方式 GB/T 7714	Guo, Haijun,Cao, Chao,Duan, Baoxing. Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer[J]. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019,2019.
APA	Guo, Haijun,Cao, Chao,&Duan, Baoxing.(2019).Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer.2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019.
MLA	Guo, Haijun,et al."Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer".2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 (2019).

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