| Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates | |
| Zhang, Kexiong; Liang, Hongwei; Song, Shiwei; Yang, Dechao; Shen, Rensheng; Liu, Yang; Xia, Xiaochuan; Luo, Yingmin; Du, Guotong | |
| 刊名 | JOURNAL OF TESTING AND EVALUATION
 |
| 2013 | |
| 卷号 | 41页码:798-803 |
| 关键词 | GaN metalorganic chemical vapor deposition stress state dislocations |
| ISSN号 | 0090-3973 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4540985 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 4.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 6.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang, Kexiong,Liang, Hongwei,Song, Shiwei,et al. Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J]. JOURNAL OF TESTING AND EVALUATION,2013,41:798-803. |
| APA | Zhang, Kexiong.,Liang, Hongwei.,Song, Shiwei.,Yang, Dechao.,Shen, Rensheng.,...&Du, Guotong.(2013).Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates.JOURNAL OF TESTING AND EVALUATION,41,798-803. |
| MLA | Zhang, Kexiong,et al."Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates".JOURNAL OF TESTING AND EVALUATION 41(2013):798-803. |
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