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	Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
	Song, Shiwei; Shen, Rensheng; Liang, Hongwei; Liu, Yang; Xia, Xiaochuan; Zhang, Kexiong; Yang, Dechao; Wang, Dongsheng; Du, Guotong
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2013
卷号	24页码:3299-3302
ISSN号	0957-4522
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4540953
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 4.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 6.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.
推荐引用方式 GB/T 7714	Song, Shiwei,Shen, Rensheng,Liang, Hongwei,et al. Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24:3299-3302.
APA	Song, Shiwei.,Shen, Rensheng.,Liang, Hongwei.,Liu, Yang.,Xia, Xiaochuan.,...&Du, Guotong.(2013).Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,24,3299-3302.
MLA	Song, Shiwei,et al."Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 24(2013):3299-3302.

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