| Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode | |
| Yang, Dechao; Liang, Hongwei; Qiu, Yu; Song, Shiwei; Liu, Yang; Shen, Rensheng; Luo, Yingmin; Du, Guotong | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 2013 | |
| 卷号 | 24页码:2716-2720 |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4540630 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 5.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 6.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Yang, Dechao,Liang, Hongwei,Qiu, Yu,et al. Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24:2716-2720. |
| APA | Yang, Dechao.,Liang, Hongwei.,Qiu, Yu.,Song, Shiwei.,Liu, Yang.,...&Du, Guotong.(2013).Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,24,2716-2720. |
| MLA | Yang, Dechao,et al."Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 24(2013):2716-2720. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论