| Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal | |
| Cheng, Yi; Liang, Hongwei; Shen, Rensheng; Xia, Xiaochuan; Wang, Bo; Liu, Yuanda; Song, Shiwei; Liu, Yang; Zhang, Zhenzhong; Du, Guotong | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 2013 | |
| 卷号 | 24页码:2750-2754 |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4540624 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China. 3.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 4.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 6.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Cheng, Yi,Liang, Hongwei,Shen, Rensheng,et al. Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24:2750-2754. |
| APA | Cheng, Yi.,Liang, Hongwei.,Shen, Rensheng.,Xia, Xiaochuan.,Wang, Bo.,...&Du, Guotong.(2013).Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,24,2750-2754. |
| MLA | Cheng, Yi,et al."Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 24(2013):2750-2754. |
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