| Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer | |
| Song, Shiwei; Liu, Yang; Liang, Hongwei; Yang, Dechao; Zhang, Kexiong; Xia, Xiaochuan; Shen, Rensheng; Du, Guotong | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 2013 | |
| 卷号 | 24页码:2923-2927 |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4540618 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 6.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Song, Shiwei,Liu, Yang,Liang, Hongwei,et al. Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24:2923-2927. |
| APA | Song, Shiwei.,Liu, Yang.,Liang, Hongwei.,Yang, Dechao.,Zhang, Kexiong.,...&Du, Guotong.(2013).Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,24,2923-2927. |
| MLA | Song, Shiwei,et al."Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 24(2013):2923-2927. |
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